Learning Overcomplete Dictionaries Based on Atom-by-Atom Updating
نویسندگان
چکیده
منابع مشابه
Learning Sparsely Used Overcomplete Dictionaries
We consider the problem of learning sparsely used overcomplete dictionaries, where each observation is a sparse combination of elements from an unknown overcomplete dictionary. We establish exact recovery when the dictionary elements are mutually incoherent. Our method consists of a clustering-based initialization step, which provides an approximate estimate of the true dictionary with guarante...
متن کاملOn Second Atom-Bond Connectivity Index
The atom-bond connectivity index of graph is a topological index proposed by Estrada et al. as ABC (G) uvE (G ) (du dv 2) / dudv , where the summation goes over all edges of G, du and dv are the degrees of the terminal vertices u and v of edge uv. In the present paper, some upper bounds for the second type of atom-bond connectivity index are computed.
متن کاملCold Matter Assembled Atom-by-Atom
Manuel Endres, 2, ∗ Hannes Bernien, ∗ Alexander Keesling, ∗ Harry Levine, ∗ Eric R. Anschuetz, Alexandre Krajenbrink, † Crystal Senko, Vladan Vuletic, Markus Greiner, and Mikhail D. Lukin Department of Physics, Harvard University, Cambridge, MA 02138, USA Division of Physics, Mathematics and Astronomy, California Institute of Technology, Pasadena, CA 91125, USA Department of Physics and Researc...
متن کاملAtom-atom entanglement by single-photon detection.
A scheme for entangling distant atoms is realized, as proposed in the seminal paper by [C. Cabrillo et al., Phys. Rev. A 59, 1025 (1999)]. The protocol is based on quantum interference and detection of a single photon scattered from two effectively one meter distant laser cooled and trapped atomic ions. The detection of a single photon heralds entanglement of two internal states of the trapped ...
متن کاملBuilding semiconductor nanostructures atom by atom
We present an atomistic tight-binding approach to calculating the electronic structure of semiconductor nanostructures. We start by deriving the strain distribution in the structure using the valence force field model. The strain field is incorporated into the tight-binding electronic structure calculation carried out in the frame of the effective bond orbital model and the fully atomistic sp3d...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: IEEE Transactions on Signal Processing
سال: 2014
ISSN: 1053-587X,1941-0476
DOI: 10.1109/tsp.2013.2295062